• DocumentCode
    162434
  • Title

    The development of a high-voltage power device evaluation platform

  • Author

    Lixing Fu ; Xuan Zhang ; He Li ; Xintong Lu ; Jin Wang

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
  • fYear
    2014
  • fDate
    13-15 Oct. 2014
  • Firstpage
    13
  • Lastpage
    17
  • Abstract
    This paper presents the development of a high voltage evaluation platform to investigate both the static and switching characteristics of silicon (Si) and silicon carbide (SiC) based high voltage (HV) power devices. The test methodologies, design, implementations, and safety guidelines for the HV device evaluation are elaborated. A 15 kV rated double pulse tester is built to study the dynamic behaviors of HV power devices. The gate drive circuit and main circuit are designed to achieve clean waveforms and safe operation. Meanwhile, a high voltage high frequency load inductor is designed with finite element analysis (FEA) tools, taking into consideration the non-uniform voltage distribution on the windings under sharp voltage impulse. Both the design details and test results are presented.
  • Keywords
    elemental semiconductors; finite element analysis; power MOSFET; semiconductor device testing; silicon; silicon compounds; wide band gap semiconductors; MOSFET; Si; SiC; device design; device implementations; finite element analysis; gate drive circuit; high voltage high frequency load inductor; high-voltage power device evaluation platform; nonuniform voltage distribution; safety guidelines; test methodologies; voltage 15 kV; Capacitance; Inductors; Logic gates; MOSFET; Silicon carbide; Switches; Windings; MOSFET; SiC; characterization; high voltage; wide bandgap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
  • Conference_Location
    Knoxville, TN
  • Type

    conf

  • DOI
    10.1109/WiPDA.2014.6964615
  • Filename
    6964615