DocumentCode
162434
Title
The development of a high-voltage power device evaluation platform
Author
Lixing Fu ; Xuan Zhang ; He Li ; Xintong Lu ; Jin Wang
Author_Institution
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
fYear
2014
fDate
13-15 Oct. 2014
Firstpage
13
Lastpage
17
Abstract
This paper presents the development of a high voltage evaluation platform to investigate both the static and switching characteristics of silicon (Si) and silicon carbide (SiC) based high voltage (HV) power devices. The test methodologies, design, implementations, and safety guidelines for the HV device evaluation are elaborated. A 15 kV rated double pulse tester is built to study the dynamic behaviors of HV power devices. The gate drive circuit and main circuit are designed to achieve clean waveforms and safe operation. Meanwhile, a high voltage high frequency load inductor is designed with finite element analysis (FEA) tools, taking into consideration the non-uniform voltage distribution on the windings under sharp voltage impulse. Both the design details and test results are presented.
Keywords
elemental semiconductors; finite element analysis; power MOSFET; semiconductor device testing; silicon; silicon compounds; wide band gap semiconductors; MOSFET; Si; SiC; device design; device implementations; finite element analysis; gate drive circuit; high voltage high frequency load inductor; high-voltage power device evaluation platform; nonuniform voltage distribution; safety guidelines; test methodologies; voltage 15 kV; Capacitance; Inductors; Logic gates; MOSFET; Silicon carbide; Switches; Windings; MOSFET; SiC; characterization; high voltage; wide bandgap;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
Conference_Location
Knoxville, TN
Type
conf
DOI
10.1109/WiPDA.2014.6964615
Filename
6964615
Link To Document