Packaging SiC power semiconductors — Challenges, technologies and strategies

Author

Schuderer, Jurgen ; Vemulapati, Umamaheswara ; Traub, Felix

Author_Institution

ABB Corp. Res., Baden, Switzerland

fYear

2014

fDate

13-15 Oct. 2014

Firstpage

18

Lastpage

23

Abstract

In this paper a comprehensive review on SiC power module challenges and technology approaches is given. These challenges originate from SiC-specific reduced chip area, from high power and high loss density operation, from high temperature capability, from fast switching transients and from high electric field operation. New approaches based on advanced integrated cooling, low-profile integrated topside bonding and low-inductance architectures are outlined and discussed.

Keywords

integrated circuit bonding; integrated circuit design; integrated circuit packaging; modules; power semiconductor devices; silicon compounds; switching transients; wide band gap semiconductors; SiC; SiC packaging; SiC power module design; SiC power semiconductors; SiC-specific reduced chip area; fast switching transients; high electric field operation; high loss density operation; high power operation; high temperature capability; integrated cooling; low-inductance architectures; low-profile integrated topside bonding; Inductance; Insulation; Logic gates; Multichip modules; Silicon; Silicon carbide; Switches; SiC challenges; SiC packaging; SiC power module design;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on

Conference_Location

Knoxville, TN

Type

conf

DOI

10.1109/WiPDA.2014.6964616

Filename

6964616