DocumentCode :
162438
Title :
Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation
Author :
Koehler, Andrew D. ; Anderson, Travis J. ; Hite, Jennifer K. ; Weaver, Bradley D. ; Tadjer, Marko J. ; Mastro, Michael A. ; Greenlee, Jordan D. ; Specht, Petra ; Porter, Matthew ; Weatherford, Todd R. ; Hobart, Karl D. ; Kub, Francis J.
Author_Institution :
Naval Res. Lab., Power Electron., Washington, DC, USA
fYear :
2014
fDate :
13-15 Oct. 2014
Firstpage :
33
Lastpage :
35
Abstract :
The degradation mechanisms of AlGaN/GaN high electron mobility transistors (HEMTs) grown on sapphire, Si, and SiC substrates, under 2 MeV proton irradiation are investigated. It was determined by electron channeling contrast imaging that the threading dislocation density of the AlGaN/GaN epitaxial layers is highest on sapphire substrates and lowest on SiC substrates. Photoluminescence spectroscopy confirmed the material quality order from worst to best to be AlGaN/GaN grown on sapphire, Si, and SiC substrates, respectively. The radiation response of sheet carrier density was not statistically different for HEMTs on each substrate, however the mobility degraded more for HEMTs with less initial dislocations (on SiC) than more defective HEMTs (on sapphire).
Keywords :
III-V semiconductors; aluminium compounds; carrier density; dislocation density; gallium compounds; high electron mobility transistors; photoluminescence; proton effects; semiconductor epitaxial layers; wide band gap semiconductors; Al2O3; AlGaN-GaN; HEMTs; Si; SiC; degradation mechanisms; electron channeling contrast imaging; electron volt energy 2 MeV; epitaxial layers; high electron mobility transistors; photoluminescence spectroscopy; proton irradiation; sapphire substrate; sheet carrier density; silicon carbide substrate; silicon substrate; threading dislocation density; Gallium nitride; HEMTs; MODFETs; Radiation effects; Silicon; Silicon carbide; Substrates; GaN HEMT; proton radiation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
Conference_Location :
Knoxville, TN
Type :
conf
DOI :
10.1109/WiPDA.2014.6964619
Filename :
6964619
Link To Document :
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