Analytical model for a dielectric modulated double gate FET (DM-DG-FET) biosensor

This work presents an analytical model for a dielectric modulated (DM) double gate (DG) MOSFET working as a biosensor. The sensitivity is quantified in terms of relative change in the threshold voltage and sub-threshold drain current derived using the model. The impact of various device geometrical parameters (i.e. channel thickness, nanogap cavity length and thickness) on the sensitivity has been also been investigated. Moreover, two types of architecture: Nanogap embedded DG-FET with a nanogap cavity at the source/drain etched in the oxide and other with complete cavity over the channel length are analyzed through the model.