Title :
Optimization of the performances of MESFET based microwave amplifiers using Plackett-Burman design of experiment
Author :
Poire, Philippe ; Simard, Hugues ; Ghannouch, Fadhel M. ; Brassard, Gilles
Author_Institution :
Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada
Abstract :
This paper presents a method for the efficient determination of the optimum operation conditions for MESFET based microwave amplifiers. It has been found that the regression analysis performed on data gathered according to Plackett-Burman designs of experiment (DOE) lead to the determination of the optimal operating conditions of the device. Experimental data have validated the proposed strategy, which also contributed to reducing the total duration of the experimentation. After 4 iterations of the process, we found the optimal operation for either power output, transducer gain or drain efficiency. No equivalent circuit model was needed for this analysis and the method was proved efficient even if the transistor has been operated in a strongly nonlinear mode
Keywords :
MESFET circuits; approximation theory; circuit analysis computing; circuit optimisation; design of experiments; iterative methods; least squares approximations; microwave amplifiers; polynomials; semiconductor device models; MESFET; Plackett-Burman design; drain efficiency; equivalent circuit model; iterations; microwave amplifiers; nonlinear mode; optimal operation; regression analysis; transducer gain; Design optimization; Equivalent circuits; Frequency; MESFETs; Microwave amplifiers; Microwave theory and techniques; Operational amplifiers; Performance evaluation; Power measurement; Reflection;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1997. IMTC/97. Proceedings. Sensing, Processing, Networking., IEEE
Conference_Location :
Ottawa, Ont.
Print_ISBN :
0-7803-3747-6
DOI :
10.1109/IMTC.1997.603934
