Optimized integrated p-i-n-structures for modulation in terahertz range

Author

Tecpoyotl-Torres, M. ; Grimalsky, Vladimir ; Gutierre, E. ; Koshevaya, S. ; Mondragón, J. Sanchez ; Moroz, I.

Author_Institution

Autonomous Univ. of Morelos, Cuernavaca, Mexico

Volume

2

fYear

2004

Firstpage

589

Abstract

Using p-i-n-structures in terahertz range faces some problems. Namely, a change of the frequency dependent effective dielectric permittivity due to injected carriers in terahertz range is not so great as in millimeter wave one. Moreover, the parameters of p-i-n-structure, like the shape and sizes of injecting junctions, the depth of the structure, and matching layers, should differ from the case of millimeter wave range. Therefore, some optimization of modulation properties at higher frequencies must be done.

Keywords

modulators; submillimetre wave mixers; ambipolar diffusion equation; boundary conditions; injected carriers distribution; injection problem; optimized integrated p-i-n-structures; quasi-optical modulators; relative dielectric permittivity; surface oriented p-i-n-structure; terahertz range modulation; transmission coefficients; Astrophysics; Boundary conditions; Electrodes; Frequency; Gallium arsenide; High speed optical techniques; Millimeter wave technology; Optical modulation; Optical surface waves; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves, 2004. MSMW 04. The Fifth International Kharkov Symposium on

Print_ISBN

0-7803-8411-3

Type

conf

DOI

10.1109/MSMW.2004.1346030

Filename

1346030