Title :
Measurement of lateral diffusion on technologies with polysilicon doping source with misalignment correction
Author :
Anguita, J. ; Perellò, C. ; Lozano, M. ; Cane, C. ; Lora-Tamayo, E.
Author_Institution :
Centro Nacional de Microelectron., Univ. Autonoma de Barcelona, Spain
Abstract :
A novel test structure consisting of a varying length depletion IGFET (insulated-gate field effect transistor) with a shorted polysilicon gate-source junction is presented. This structure makes it possible to extract an effective channel length from an electrical measurement and, as a result, the amount of lateral diffusion on its source junction is extracted. A particular arrangement of the gate and source shorts is selected to eliminate misalignment errors
Keywords :
CMOS integrated circuits; MOS integrated circuits; diffusion in solids; elemental semiconductors; impurity distribution; insulated gate field effect transistors; integrated circuit technology; integrated circuit testing; semiconductor doping; silicon; CMOS-NMOS compatible process; effective channel length; electrical measurement; insulated-gate field effect transistor; lateral diffusion; misalignment correction; monolithic IC; polysilicon doping source; test structure; varying length depletion IGFET; BiCMOS integrated circuits; CMOS technology; Contacts; Doping; Electric variables measurement; Etching; Implants; Length measurement; Semiconductor device measurement; Testing;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161735
