Temperature and bias dependent gate leakage in AlInN/GaN High Electron Mobility Transistor

Author

Sreenidhi, T. ; Dasgupta, Avirup ; DasGupta, Nandita

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India

fYear

2012

Firstpage

1

Lastpage

4

Abstract

Temperature and bias dependence of gate leakage current in AlInN/GaN High Electron Mobility Transistor (HEMT) is studied over a wide range of temperature and bias. Poole-Frankel (PF) emission, Fowler-Nordheim (FN) Tunneling, impact ionization and hopping conduction are found to be the dominant leakage mechanisms at different regions of reverse bias. The results suggest that the gate leakage current is governed by not one but several mechanisms depending on the bias and temperature.

Keywords

III-V semiconductors; Poole-Frenkel effect; aluminium compounds; gallium compounds; high electron mobility transistors; hopping conduction; impact ionisation; indium compounds; leakage currents; tunnelling; wide band gap semiconductors; AlInN-GaN; AlInN/GaN high electron mobility transistor; Fowler-Nordheim tunneling; Poole-Frankel emission; bias dependent gate leakage current; hopping conduction; impact ionization; reverse bias; temperature dependent gate leakage current; Gallium nitride; HEMTs; Leakage currents; Logic gates; MODFETs; Temperature dependence; Tunneling; AlInN/GaN HEMT; Gate Leakage; Schottky Contact; Traps;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2012 International Conference on

Conference_Location

Mumbai

Print_ISBN

978-1-4673-3135-7

Type

conf

DOI

10.1109/ICEmElec.2012.6636260

Filename

6636260