Title :
Temperature and bias dependent gate leakage in AlInN/GaN High Electron Mobility Transistor
Author :
Sreenidhi, T. ; Dasgupta, Avirup ; DasGupta, Nandita
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India
Abstract :
Temperature and bias dependence of gate leakage current in AlInN/GaN High Electron Mobility Transistor (HEMT) is studied over a wide range of temperature and bias. Poole-Frankel (PF) emission, Fowler-Nordheim (FN) Tunneling, impact ionization and hopping conduction are found to be the dominant leakage mechanisms at different regions of reverse bias. The results suggest that the gate leakage current is governed by not one but several mechanisms depending on the bias and temperature.
Keywords :
III-V semiconductors; Poole-Frenkel effect; aluminium compounds; gallium compounds; high electron mobility transistors; hopping conduction; impact ionisation; indium compounds; leakage currents; tunnelling; wide band gap semiconductors; AlInN-GaN; AlInN/GaN high electron mobility transistor; Fowler-Nordheim tunneling; Poole-Frankel emission; bias dependent gate leakage current; hopping conduction; impact ionization; reverse bias; temperature dependent gate leakage current; Gallium nitride; HEMTs; Leakage currents; Logic gates; MODFETs; Temperature dependence; Tunneling; AlInN/GaN HEMT; Gate Leakage; Schottky Contact; Traps;
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636260
