Title :
Isomorphic polynomial based precise analytical modeling of 3D potential distribution for surrounding gate gate-all-around MOSFET
Author :
Sharma, Divya ; Vishvakarma, Santosh Kumar
Author_Institution :
VLSI/ULSI Circuit & Syst. Design Lab., Indian Inst. of Technol. Indore, Indore, India
Abstract :
We present an analytical model of 3D potential distribution for surrounding-gate (SurG) gate-all-around (GAA) MOSFET. The model is based on solution of Laplace´s and Poisson´s equations, where isomorphic polynomial functions are used to describe the potential distribution. The short channel effects are precisely accounted for by introducing z dependent characteristic length. From this, the device electrostatics can be calculated in the full range of bias voltage. The model compares well with numerical calculations obtained from the 3D ATLAS device simulator.
Keywords :
Laplace equations; MOSFET; Poisson equation; polynomials; semiconductor device models; 3D ATLAS device simulator; 3D potential distribution; Laplace equations; Poisson equations; bias voltage; device electrostatics; isomorphic polynomial based precise analytical modeling; numerical calculations; short channel effects; surrounding gate gate-all-around MOSFET; z dependent characteristic length; Analytical models; Electric potential; Electrostatics; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Surrounding gate; characteristic length; device electrostatics; multiple-gate; short-channel effect;
Conference_Titel :
Emerging Electronics (ICEE), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4673-3135-7
DOI :
10.1109/ICEmElec.2012.6636261
