Title :
Passivation of SiO2/SiC interface with La2O3 capped oxidation
Author :
Munekiyo, S. ; Lei, Y.M. ; Natori, K. ; Iwai, Hisato ; Kawanago, T. ; Kakushima, K. ; Kataoka, Kotaro ; Nishiyama, A. ; Sugii, Nobuyuki ; Wakabayashi, H. ; Tsutsui, K. ; Furuhashi, Masayuki ; Miura, Naruhisa ; Yamakawa, Satoshi
Author_Institution :
Frontier Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Thermal oxidation of SiC(0001) substrates with La2O3 capped annealing has been performed. La2O3 capped oxidation has shown improvements in reduced hysteresis and interface state density (Dit) for MOS capacitors. La-silicate grains, agglomerated at the step bunches of SiC substrates, have been confirmed upon oxidation. We can anticipated that La-silicate grains are likely to passivate the charge trapping at step bunches and effectively suppresses the Dit.
Keywords :
MOS capacitors; annealing; interface states; lanthanum compounds; oxidation; passivation; silicon compounds; La-silicate grains; La2O3 capped oxidation; MOS capacitors; SiC; SiC(0001) substrates; SiO2-SiC interface; SiO2-SiC-La2O3; annealing; interface state density; passivation; thermal oxidation; Annealing; Hysteresis; Logic gates; MOS capacitors; Oxidation; Silicon carbide; Substrates;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on
Conference_Location :
Knoxville, TN
DOI :
10.1109/WiPDA.2014.6964636
