DocumentCode
1624614
Title
BiCMOS cascaded bandgap voltage reference
Author
Filanovsky, I.M. ; Chan, Yiu Fai
Author_Institution
Alberta Univ., Edmonton, Alta., Canada
Volume
2
fYear
1996
Firstpage
943
Abstract
A bandgap voltage reference with a circuit providing compensation of the thermal nonlinearity for the base-emitter voltage is described. The temperature dependence of VBE(T) is linearized using, as the bias current, a sum of two currents one of which is proportional to the third degree, and another to the fourth degree of absolute temperature. Two versions of the circuit are given, one is designed for 5 V, and another for 3 V supply voltage. Theoretical calculations show that the thermal instability of the output reference voltage can be reduced down to 0.2 ppm/°C. The simulation results for the circuits obtained by extraction from the layouts with non-protected pads give the figures of 4 ppm/°C (5 V power supply) and 8 ppm/°C (3 V power supply) in the range -50°C to 180°C
Keywords
BiCMOS analogue integrated circuits; cascade networks; circuit stability; compensation; linearisation techniques; reference circuits; thermal stability; -50 to 180 C; 3 V; 5 V; BiCMOS bandgap voltage reference; base-emitter voltage; bias current; cascaded bandgap voltage reference; compensation; output reference voltage; temperature dependence; thermal instability; thermal nonlinearity; Circuits; Doping; Equations; Joining processes; Photonic band gap; Taylor series; Temperature dependence; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location
Ames, IA
Print_ISBN
0-7803-3636-4
Type
conf
DOI
10.1109/MWSCAS.1996.588110
Filename
588110
Link To Document