• DocumentCode
    1624614
  • Title

    BiCMOS cascaded bandgap voltage reference

  • Author

    Filanovsky, I.M. ; Chan, Yiu Fai

  • Author_Institution
    Alberta Univ., Edmonton, Alta., Canada
  • Volume
    2
  • fYear
    1996
  • Firstpage
    943
  • Abstract
    A bandgap voltage reference with a circuit providing compensation of the thermal nonlinearity for the base-emitter voltage is described. The temperature dependence of VBE(T) is linearized using, as the bias current, a sum of two currents one of which is proportional to the third degree, and another to the fourth degree of absolute temperature. Two versions of the circuit are given, one is designed for 5 V, and another for 3 V supply voltage. Theoretical calculations show that the thermal instability of the output reference voltage can be reduced down to 0.2 ppm/°C. The simulation results for the circuits obtained by extraction from the layouts with non-protected pads give the figures of 4 ppm/°C (5 V power supply) and 8 ppm/°C (3 V power supply) in the range -50°C to 180°C
  • Keywords
    BiCMOS analogue integrated circuits; cascade networks; circuit stability; compensation; linearisation techniques; reference circuits; thermal stability; -50 to 180 C; 3 V; 5 V; BiCMOS bandgap voltage reference; base-emitter voltage; bias current; cascaded bandgap voltage reference; compensation; output reference voltage; temperature dependence; thermal instability; thermal nonlinearity; Circuits; Doping; Equations; Joining processes; Photonic band gap; Taylor series; Temperature dependence; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1996., IEEE 39th Midwest symposium on
  • Conference_Location
    Ames, IA
  • Print_ISBN
    0-7803-3636-4
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1996.588110
  • Filename
    588110