Title :
1.3-μm wavelength InP laterally coupled distributed feedback ridge laser
Author :
Chen, Nong ; Watanabe, Yoshiaki ; Takei, Kiyoshi ; Chikuma, Kiyofumi
Author_Institution :
Devices & Mater. Dept., Pioneer Electron. Corp., Saitama, Japan
Abstract :
In this paper, the fabrication and characterization of 1.3-μm wavelength GaInAsP-InP laterally coupled DFB ridge laser are presented for the first time, to our knowledge. One-step MOCVD (metal organic chemical vapor deposition) has been used for the epitaxial growth of the laser structure with a separate confinement heterostructure bulk active layer
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical fabrication; ridge waveguides; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; 1.3 mum; GaInAsP-InP; GaInAsP-InP laterally coupled DFB ridge laser; InP laterally coupled distributed feedback ridge laser fabrication; epitaxial growth; one-step MOCVD; separate confinement heterostructure bulk active layer; Chemical lasers; Chemical vapor deposition; Distributed feedback devices; Epitaxial growth; Indium phosphide; Laser feedback; MOCVD; Optical coupling; Optical device fabrication; Organic chemicals;
Conference_Titel :
Optical Fiber Communication. OFC 97., Conference on
Conference_Location :
Dallas, TX
Print_ISBN :
1-55752-480-7
DOI :
10.1109/OFC.1997.719852
