Title :
Test structure for determining boron diffusion coefficient in tungsten silicide
Author :
Kataoka, Y. ; Suzuki, K. ; Horie, H. ; Yamashita, Y. ; Nakayama, N. ; Kitakohji, T.
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
Abstract :
In order to study impurity diffusion in silicide, the authors patterned tungsten silicide into a line 2 mm long and 30 μm wide and selectively implanted boron into a 40-μm-long window. They modeled lateral diffusion profiles in this test structure and determined the diffusion coefficients of boron from SIMS (secondary ion mass spectrometry) line-scan profiles as 4.0×10-10 cm2 /s at 650°C, 9.5×10-9 cm2/s at 800°C, and 2.0×10-8 cm2/s at 900°C. This is more than 106 times larger than that in silicon. The results obtained make it possible to design a thermal process for half-micron dual-gate CMOS
Keywords :
boron; diffusion in solids; impurities; integrated circuit testing; metallisation; secondary ion mass spectra; tungsten compounds; 650 to 900 degC; B diffusion coefficient; SIMS; WSi2:B; half-micron dual-gate CMOS; impurity diffusion; lateral diffusion profiles; secondary ion mass spectrometry; test structure; thermal process; Boron; Image analysis; Impurities; Laboratories; Nitrogen; Silicides; Solids; Testing; Thermal degradation; Tungsten;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161736
