High-temperature effects on device performance of a junctionless transistor

This paper presents the effects of high-temperature on the major digital and analog performance parameters of a 20-nm channel length n-type symmetric double-gate junctionless transistor (DGJLT) with the help of extensive device simulations. The characteristics are compared with conventional inversion mode counterpart i.e., double-gate transistor (DGMOS) of same dimension. It is found that the ON-state current increases very marginally with increase in temperature for DGJLT unlike DGMOS in which it decreases. The drain current with respect to drain voltage increases negligibly with increase in temperature for DGJLT, whereas it decreases for DGMOS. Intrinsic gain is almost independent of temperature at higher gate voltage (> 0.6 V) for DGJLT.