Title :
A very low distortion SiGe BiCMOS down converter for W-CDMA applications
Author :
Watanabe, Daisuke ; Imanishi, I. ; Itoh, J. ; Nakatani, T. ; Saeki, T.
Author_Institution :
RF Semicond. Dev. Center, Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan
Abstract :
A very low distortion down converter for a W-CDMA was developed. A LO amplifier is constructed with a differential amplifier and transistors which operate as a push-pull driver amplifier. As this LO amplifier has faster switching time of the differential pair, the down converter achieved a low noise figure (NF) performance. In addition, the low output impedance of the LO amplifier leads to lower supply current without using the LO buffer circuit. Insertion of a resistance between the bases of the transconductance stage of the mixer circuit realized low distortion without a degradation of the noise figure of the down converter. The down converter in SiGe-BiCMOS process achieved conversion gain of 11.0 dB, NF of 8.8 dB and IIP3 of +3.5 dBm with 7.4 mA current consumption, 2.8 V supply voltage.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; code division multiple access; differential amplifiers; distortion; driver circuits; frequency convertors; mixers (circuits); semiconductor materials; 11.0 dB; 2.8 V; 7.4 mA; 8.8 dB; IIP3; LO amplifier; SiGe; SiGe BiCMOS down converter; W-CDMA; conversion gain; differential amplifier; distortion; mixer circuit; noise figure; push-pull driver amplifier; BiCMOS integrated circuits; Differential amplifiers; Driver circuits; Germanium silicon alloys; Low-noise amplifiers; Multiaccess communication; Noise figure; Noise measurement; Silicon germanium; Switching converters;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210433
