Title :
A low-power and variable-gain transceiver front-end chip for 5-GHz-band WLAN applications
Author :
Dodo, H. ; Aoki, Y. ; Hayama, N. ; Fujii, M. ; Yamaguchi, Y. ; Sasaki, Y. ; Ohba, H. ; Hida, H.
Author_Institution :
Photonic & Wireless Device Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
A low-power 5-GHz-band transceiver front-end chip is described that uses highly reliable, high-performance InGaP/GaAs HBTs and complies with IEEE802.11a standards. Integrated into the chip (2.4/spl times/2.4 mm/sup 2/) are a 20/0-dB dual-gain low-noise amplifier and a wide IF-range down-conversion mixer in the receiver path, a 20-dB variable-gain driver amplifier and a low and stable local oscillator (LO) leakage up-conversion mixer in the transmitter path, and a high-isolation LO buffer. Very low power consumption (120 mW) is attained with a single 3-V supply voltage in receiver mode together with high transceiver performance. The key features and new circuit approaches in each function block are described in details. Measurement showed that a 5-GHz OFDM-modulated Tx signal meets IEEE802.11a standards.
Keywords :
III-V semiconductors; OFDM modulation; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; low-power electronics; transceivers; wireless LAN; 120 mW; 20 dB; 3 V; 5 GHz; IEEE802.11a standard; InGaP-GaAs; InGaP/GaAs HBT; LO buffer; OFDM modulation; WLAN; down-conversion mixer; driver amplifier; low-noise amplifier; low-power variable-gain transceiver front-end chip; up-conversion mixer; Driver circuits; Energy consumption; Gallium arsenide; Local oscillators; Low-noise amplifiers; Measurement standards; Transceivers; Transmitters; Voltage; Wireless LAN;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210434