Low distortion RF-LDMOS power transistor for wireless communications base station applications

Author

Gajadharsing, J.R.

Author_Institution

Mobile Commun. Bus. Unit, Philips Semicond., Nijmegen, Netherlands

Volume

3

fYear

2003

Firstpage

1563

Abstract

In this paper, an LDMOS power transistor design is described, having a square-law approximated transfer characteristic to obtain very low distortion in class-AB operation. Compared to conventional LDMOS transistors, significant linearity improvement is achieved over a large power range. Measurements on a 30 W/2 GHz transistor demonstrates 5 to 10 dB improvement in intermodulation distortion (IMD) and single-carrier adjacent channel leakage ratio (ACLR) for WCDMA in the back-off region. The new LDMOS is very suitable for multi-carrier amplifiers in 3G system.

Keywords

3G mobile communication; UHF field effect transistors; UHF power amplifiers; code division multiple access; intermodulation distortion; linearisation techniques; power MOSFET; semiconductor device measurement; 2 GHz; 30 W; 3G system multi-carrier amplifiers; ACLR; IMD; LDMOS linearity improvement; WCDMA back-off region; communications base station power amplifiers; intermodulation distortion; low class-AB operation distortion; low distortion RF-LDMOS power transistors; single-carrier adjacent channel leakage ratio; transistor square-law approximated transfer characteristics; Base stations; Costs; Linearity; Mobile communication; Multiaccess communication; Nonlinear distortion; Power amplifiers; Power transistors; Radiofrequency amplifiers; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210435

Filename

1210435