MMICs for mobile/personal communications applications

Author

Aikawa, Masayoshi ; Muraguchi, M.

Author_Institution

NTT Wireless Syst. Lab., Kanagawa, Japan

fYear

1995

Firstpage

25

Lastpage

28

Abstract

The demand for mobile and personal communications systems is expected to produce a huge market for handy phone sets and their MMICs in the coming years. A number of ICs in silicon bipolar, silicon Bi-CMOS, GaAs MESFET, HBT, and HEMT technology are now becoming available for system application. There are tradeoffs among the competing technologies with regard to performance, cost, reliability, and time-to-market. This paper describes process selection and requirements of cost and RF performance to MMICs for digital cellular and cordless telephones. Furthermore, new circuit techniques which were developed by NTT are presented

Keywords

BiCMOS digital integrated circuits; HEMT integrated circuits; MESFET integrated circuits; bipolar MMIC; cellular radio; digital radio; heterojunction bipolar transistors; telephone sets; telephony; GaAs; HBT; HEMT; III-V semiconductors; MESFET; MMIC; NTT; RF performance; cost; digital cellular telephones; digital cordless telephones; handy phone sets; mobile communications systems; performance; personal communications systems; process selection; reliability; silicon Bi-CMOS IC; silicon bipolar IC; time to market; Costs; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MESFETs; MMICs; Radio frequency; Silicon; Time to market; Tutorial;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on

Conference_Location

San Francisco

Print_ISBN

0-7803-2516-8

Type

conf

DOI

10.1109/ISSSE.1995.497926

Filename

497926