Title :
MMICs for mobile/personal communications applications
Author :
Aikawa, Masayoshi ; Muraguchi, M.
Author_Institution :
NTT Wireless Syst. Lab., Kanagawa, Japan
Abstract :
The demand for mobile and personal communications systems is expected to produce a huge market for handy phone sets and their MMICs in the coming years. A number of ICs in silicon bipolar, silicon Bi-CMOS, GaAs MESFET, HBT, and HEMT technology are now becoming available for system application. There are tradeoffs among the competing technologies with regard to performance, cost, reliability, and time-to-market. This paper describes process selection and requirements of cost and RF performance to MMICs for digital cellular and cordless telephones. Furthermore, new circuit techniques which were developed by NTT are presented
Keywords :
BiCMOS digital integrated circuits; HEMT integrated circuits; MESFET integrated circuits; bipolar MMIC; cellular radio; digital radio; heterojunction bipolar transistors; telephone sets; telephony; GaAs; HBT; HEMT; III-V semiconductors; MESFET; MMIC; NTT; RF performance; cost; digital cellular telephones; digital cordless telephones; handy phone sets; mobile communications systems; performance; personal communications systems; process selection; reliability; silicon Bi-CMOS IC; silicon bipolar IC; time to market; Costs; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MESFETs; MMICs; Radio frequency; Silicon; Time to market; Tutorial;
Conference_Titel :
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location :
San Francisco
Print_ISBN :
0-7803-2516-8
DOI :
10.1109/ISSSE.1995.497926
