A low-cost-packaged 4.9-6 GHz LNA for WLAN applications

Author

Imbs, E. ; Telliez, I. ; Detout, S. ; Imbs, Y.

Author_Institution

STMicroelectronics, Crolles, France

Volume

3

fYear

2003

Firstpage

1569

Abstract

A two stage fully integrated low-noise amplifier has been developed for 4.9-6 GHz WLAN applications. This circuit was realized in a 0.35 /spl mu/m SiGe BiCMOS process and packaged in a low cost plastic VFQFPN package. The circuit operates over a wide band (4.9-6 GHz) and draws 13.2 mA from 2.0 V supply. It exhibits a noise figure of 3.9 dB and a gain of 18.7 dB at 5.5 GHz. The measured IIP1 and IIP3 are respectively -13.9 dBm and -3.5 dBm at 5.5 GHz. The input and output return losses are lower than -10 dB and the gain ripple is less than 1.5 dB over all the frequency bandwidth.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; integrated circuit design; integrated circuit measurement; integrated circuit noise; integrated circuit packaging; plastic packaging; semiconductor materials; wireless LAN; 0.35 micron; 10 dB; 13.2 mA; 18.7 dB; 2.0 V; 3.9 dB; 4.9 to 6 GHz; 5.5 GHz; IIP1; IIP3; LNA gain; SiGe; WLAN; gain ripple; input output return losses; low-cost-packaged microwave LNA; noise figure; plastic VFQFPN packaging; two stage fully integrated low-noise amplifiers; wideband SiGe BiCMOS LNA; wireless local area networks; BiCMOS integrated circuits; Costs; Gain; Germanium silicon alloys; Low-noise amplifiers; Noise figure; Plastic packaging; Silicon germanium; Wideband; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210436

Filename

1210436