Title :
BiCMOS at low supply voltage
Author :
Elmasry, M.I. ; Bellaouar, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
The effect of scaling device feature size on MOS and bipolar device performance is reviewed. Scaling power supply with proper device scaling is discussed. It is shown that conventional BiCMOS circuit operates faster than CMOS down to 3 V power supply. In the range 3 V to 2 V BiNMOS and QCBiCMOS circuits demonstrate superior performance particularly the latter. For sub-2 V operation, circuit configuration based on the saturation of the bipolar transistors showed good performance, but still many new configurations must be investigated
Keywords :
BiCMOS integrated circuits; 3 to 0 V; BiCMOS; BiNMOS; MOS device performance; QCBiCMOS circuits; bipolar device performance; bipolar transistors; digital circuit design; low supply voltage; saturation; scaling device feature size; scaling power supply; BiCMOS integrated circuits;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617476
