Quasi-optical microstrip amplifiers based on multilayer coupled structures

Author

Ivanov, Toni ; Mortazawi, Amir

Author_Institution

Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

fYear

1995

Firstpage

99

Lastpage

102

Abstract

Single stage and double stage quasi-optical amplifiers are presented. The amplifiers are constructed on double layer back to back microstrip circuits with a shared ground plane. The ground plane provides an effective isolation between the receiving and the transmitting antenna arrays. Furthermore it serves as a heat sink in high power amplifier designs. The single stage quasi-optical amplifier had a gain of 7.54 dB at 10.04 GHz and the two stage quasi-optical amplifier had a gain of 18.0 dB at 9.95 GHz

Keywords

HEMT circuits; microstrip antenna arrays; microstrip circuits; microwave integrated circuits; microwave power amplifiers; power amplifiers; power combiners; 10.04 GHz; 18 dB; 7.54 dB; 9.95 GHz; HEMT; SHF; double stage amplifiers; heat sink; high power amplifier designs; microstrip circuits; multilayer coupled structures; quasi-optical microstrip amplifiers; receiving antenna arrays; shared ground plane; single stage amplifiers; transmitting antenna arrays; Antenna arrays; Coupling circuits; Frequency; Gain measurement; Integrated circuit interconnections; Microstrip antennas; Nonhomogeneous media; Optical amplifiers; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on

Conference_Location

San Francisco

Print_ISBN

0-7803-2516-8

Type

conf

DOI

10.1109/ISSSE.1995.497942

Filename

497942