Recent applications of 2D and quasi 2D simulations: evaluation of performance and fundamental limitation of power FET

Author

De Jaeger, J.C.

Author_Institution

Dept. Hyperfrequences et Semiconducteurs, CNRS, Villeneuve d´´Ascq, France

fYear

1995

Firstpage

111

Lastpage

114

Abstract

In this paper, recent results concerning FETs for power applications are presented. The study is based on two kinds of simulation which make possible to perform exhaustive investigations: a physical two dimensional hydrodynamic energy model and a quasi two dimensional model. The study of the potentialities and limitations of HEMTs for applications beyond 60 GHz and LT GaAs MISFETs for low frequency ones are proposed as examples

Keywords

MISFET; gallium arsenide; microwave field effect transistors; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; power field effect transistors; semiconductor device models; simulation; 2D simulations; 60 GHz; GaAs; HEMTs; LT GaAs MISFETs; fundamental limitation; performance evaluation; physical 2D hydrodynamic energy model; power FET; quasi two dimensional model; quasi-2D simulations; Energy conservation; Energy resolution; Frequency; Gallium arsenide; HEMTs; Hydrodynamics; MISFETs; MODFETs; Microwave devices; Poisson equations;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on

Conference_Location

San Francisco

Print_ISBN

0-7803-2516-8

Type

conf

DOI

10.1109/ISSSE.1995.497945

Filename

497945