DocumentCode
1625840
Title
Epitaxial III–V-on-silicon waveguide butt-coupled photodetectors
Author
Feng, Shaoqi ; Geng, Yu ; Lau, Kei May ; Poon, Andrew W.
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear
2012
Firstpage
51
Lastpage
53
Abstract
We demonstrate butt-coupled p-i-n InGaAs photodetectors epitaxially grown on silicon substrates by MOCVD. We measure a dark current of 8 nA upon -1V and open eye-diagrams at 15Gb/s upon -3V and at 20Gb/s upon -5V.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optics; optical waveguides; photodetectors; semiconductor epitaxial layers; vapour phase epitaxial growth; InGaAs-Si; MOCVD; Si; bit rate 15 Gbit/s; bit rate 20 Gbit/s; butt-coupled p-i-n photodetectors; current 8 nA; dark current; epitaxial III-V-on-silicon waveguide; epitaxial growth; open eye-diagrams; silicon substrates; voltage -3 V; voltage -5 V; Current measurement; Epitaxial growth; Indium gallium arsenide; Optical waveguides; Photodetectors; Silicon; Substrates; InGaAs photodetectors; MOCVD; Metamorphic technology; Si Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location
San Diego, CA
ISSN
1949-2081
Print_ISBN
978-1-4577-0826-8
Type
conf
DOI
10.1109/GROUP4.2012.6324083
Filename
6324083
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