Title :
Accurate, wideband characterization and optimization of high power LDMOS amplifier memory properties
Author :
Eron, M. ; Martony, E. ; Fogel, Y. ; Jeckeln, E. ; Hrybenko, M.
Author_Institution :
Ericsson Amplifier Technol. Inc., Hauppauge, NY, USA
Abstract :
Accurate, wideband measurements of high power LDMOS PCS band stages were carried out in an effort to quantify their memory characteristics. The measurements help identify intrinsic and extrinsic sources of memory in addition to a measurable parameter that can be used for improved design. Results of successful circuit optimization for memory are also presented.
Keywords :
MOSFET circuits; UHF power amplifiers; circuit optimisation; circuit testing; intermodulation distortion; wideband amplifiers; 120 W; 180 W; 2 GHz; 2 GHz two-tone set up; IMD asymmetry; IMD products; accurate wideband measurements; circuit optimization; distortion; high power LDMOS PCS band stages; high power LDMOS amplifier memory properties; memory characteristics; wideband characterization; Broadband amplifiers; Circuit testing; Distortion measurement; Frequency; High power amplifiers; Personal communication networks; Power amplifiers; Power measurement; Radiofrequency amplifiers; Radiofrequency identification;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210473
