High speed electro-absorption modulator based on quantum-confined stark effect from Ge/SiGe multiple quantum wells

Author

Chaisakul, P. ; Rouifed, M-S ; Marris-Morini, D. ; Isella, G. ; Chrastina, D. ; Frigerio, J. ; Le Roux, X. ; Edmond, S. ; Coudevylle, J-R ; Vivien, L.

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France

fYear

2012

Firstpage

60

Lastpage

62

Abstract

A 90 μm long 23 GHz Ge/SiGe modulator using the QCSE in waveguide configuration was demonstrated with an ER higher than 10 dB for a wide spectral range. Energy consumption was only 108 fJ/bit.

Keywords

Ge-Si alloys; electro-optical modulation; electroabsorption; elemental semiconductors; energy consumption; extinction coefficients; germanium; optical waveguides; quantum confined Stark effect; quantum well devices; semiconductor quantum wells; ER; Ge-SiGe; QCSE; energy consumption; extinction ratio; frequency 23 GHz; high speed electro-absorption modulator; multiple quantum wells; quantum-confined Stark effect; size 90 mum; waveguide configuration; Absorption; Energy consumption; Modulation; Optical waveguides; Quantum well devices; Silicon; Silicon germanium; Electro-absorption modulator; Ge/SiGe multiple quantum wells; Optical interconnects; Silicon photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2012 IEEE 9th International Conference on

Conference_Location

San Diego, CA

ISSN

1949-2081

Print_ISBN

978-1-4577-0826-8

Type

conf

DOI

10.1109/GROUP4.2012.6324086

Filename

6324086