Title :
High speed electro-absorption modulator based on quantum-confined stark effect from Ge/SiGe multiple quantum wells
Author :
Chaisakul, P. ; Rouifed, M-S ; Marris-Morini, D. ; Isella, G. ; Chrastina, D. ; Frigerio, J. ; Le Roux, X. ; Edmond, S. ; Coudevylle, J-R ; Vivien, L.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
Abstract :
A 90 μm long 23 GHz Ge/SiGe modulator using the QCSE in waveguide configuration was demonstrated with an ER higher than 10 dB for a wide spectral range. Energy consumption was only 108 fJ/bit.
Keywords :
Ge-Si alloys; electro-optical modulation; electroabsorption; elemental semiconductors; energy consumption; extinction coefficients; germanium; optical waveguides; quantum confined Stark effect; quantum well devices; semiconductor quantum wells; ER; Ge-SiGe; QCSE; energy consumption; extinction ratio; frequency 23 GHz; high speed electro-absorption modulator; multiple quantum wells; quantum-confined Stark effect; size 90 mum; waveguide configuration; Absorption; Energy consumption; Modulation; Optical waveguides; Quantum well devices; Silicon; Silicon germanium; Electro-absorption modulator; Ge/SiGe multiple quantum wells; Optical interconnects; Silicon photonics;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324086
