Analysis of the “hot” electron regime of operation in heterostructure field effect transistors

Author

Martinez, E. ; Shur, M. ; Schuermeyer, F.

Author_Institution

Wright Lab., Wright-Patterson AFB, OH, USA

fYear

1995

Firstpage

167

Lastpage

170

Abstract

An analytical model to describe the hot electron regime of operation has been presented. This model was built on a Charge Control Model and a CHINT-like model in which the electron temperature is limited by the intervalley transfer and real-space transfer of electrons. Good agreement between the models and the experimental data was found over a wide temperature range, from 198 K to 398 K. Understanding of these complex mechanisms is important to effectively reduce the gate leakage current in complementary HFETs

Keywords

field effect transistors; hot carriers; leakage currents; semiconductor device models; 198 to 450 K; AlGaAs-InGaAs-GaAs; AlInAs-InGaAs-InP; CHINT-like model; analytical model; charge control model; complementary HFETs; electron temperature; electron transfer; gate leakage current; heterostructure field effect transistors; hot electron regime; intervalley transfer; real-space transfer; Acceleration; Analytical models; Circuits; Electrons; FETs; HEMTs; MODFETs; Solid modeling; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on

Conference_Location

San Francisco

Print_ISBN

0-7803-2516-8

Type

conf

DOI

10.1109/ISSSE.1995.497959

Filename

497959