60 GHz MMIC mixer using a dual-gate PM HEMT

Author

Allam, R. ; Kolanowski, C. ; Langrez, D. ; Bourne, P. ; De Jaeger, J.C. ; Crosnier, Y. ; Salmer, G.

Author_Institution

Dept. Hyperfrequences et Semicond., Lille I Univ., Villeneuve d´´Ascq, France

fYear

1995

Firstpage

171

Lastpage

174

Abstract

A Dual-Gate PM HFET monolithic mixer has been developed, fabricated and measured at 60 GHz. This circuit uses a 0.15 μm gate length AlGaAs/InGaAs/GaAs pseudomorphic HEMT technology. The design optimization is performed from a complete extraction method of the dual-gate device and a non-linear electrical modeling. The mixer has a maximum conversion gain of -5 dB, a minimum noise figure of 11 dB at 5 dBm LO power, an output IMP3 of -2 dBm and a LO to RF isolation close to 35 dB

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC mixers; aluminium compounds; field effect MMIC; gallium arsenide; indium compounds; -5 dB; 0.15 micron; 11 dB; 60 GHz; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs pseudomorphic HEMT; IMP3; LO power; LO to RF isolation; MMIC mixer; conversion gain; design optimization; dual-gate HFET; extraction method; noise figure; nonlinear electrical modeling; Circuits; Design optimization; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Noise figure; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on

Conference_Location

San Francisco

Print_ISBN

0-7803-2516-8

Type

conf

DOI

10.1109/ISSSE.1995.497960

Filename

497960