Title :
Impulse generator targeting the European UWB mask
Author :
Schleicher, Bernd ; Schumacher, Hermann
Author_Institution :
Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany
Abstract :
This paper presents a monolithic impulse generator IC targeting the spectral mask for ultra-wideband applications allocated in the European Union. The multicycle impulse is based on a spike triggered resonant circuit and has a peak to peak output amplitude of 32 mV and a time domain extension of 0.83 ns (full width at half maximum). It can generate single pulses as well as repetition rates exceeding the 200 MHz shown in this paper. The IC includes a conversion stage, which can generate the triggering spike from a low slew rate signal. The IC is fabricated in a Si/SiGe HBT production technology, has a power consumption of 58.6 mW at 200 MHz repetition rate and an on-chip area of 480 à 880 ¿m2, both including the conversion stage. Based on the time domain measurement a model of the impulse transient for the use in system simulations is also presented. The modell equation applies a summation of two Gaussian bell shapes as the envelope function, which is multiplied with a phase-corrected sinusoidal waveform to arrive at the final shape.
Keywords :
Gaussian processes; Ge-Si alloys; bipolar integrated circuits; pulse generators; silicon; time-domain analysis; ultra wideband technology; European UWB mask; European Union; Gaussian bell shapes; HBT production technology; SiGe-Si; envelope function; frequency 200 MHz; monolithic impulse generator IC; phase-corrected sinusoidal waveform; power 58.6 mW; spectral mask; spike triggered resonant circuit; time 0.83 ns; time domain measurement; ultra-wideband application; voltage 32 mV; Application specific integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Monolithic integrated circuits; Pulse generation; RLC circuits; Shape; Signal generators; Silicon germanium; Ultra wideband technology; European UWB mask; IR-UWB; Impulse generator; impulse-radio ultrawideband;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422846