A new bipolar extraction tool for wide range of device behaviours

Author

Mazaleyrat, Eric ; Celi, Didier ; Juge, André ; Cialdella, Bruno

Author_Institution

SGS Thomson Microelectron., Grenoble, France

fYear

1990

Firstpage

203

Lastpage

208

Abstract

The recent development of BiCMOS and advanced bipolar and merged bipolar CMOS and DMOS technologies requires the enhancement of both models and parameter extraction strategies for the bipolar device. In order to take into account special behavior such as the base push-out effect or the nonideal base current, new features have been added to the classical SPICE BJT (bipolar junction transistor) model. A flexible software tool has been developed to allow the use of different parameter extraction schemes suitable for a wide range of device behaviors. Experimental validations have been performed in DC analysis. The RMS (root mean square) error on current gain is less than 2%

Keywords

bipolar integrated circuits; bipolar transistors; electronic engineering computing; semiconductor device models; DC analysis; SPIC BJT model; base push-out effect; bipolar device; bipolar extraction tool; bipolar junction transistor; models; nonideal base current; parameter extraction strategies; software tool; CMOS technology; Diodes; Equations; Integrated circuit modeling; Microelectronics; Parameter extraction; SPICE; Semiconductor device modeling; Semiconductor process modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-87942-588-1

Type

conf

DOI

10.1109/ICMTS.1990.161741

Filename

161741