• DocumentCode
    1626122
  • Title

    1.55 µm electroluminescence from strained n-Ge quantum wells on silicon substrates

  • Author

    Gallacher, Kevin ; Velha, Philippe ; Paul, Douglas J. ; Frigerio, Jacopo ; Chrastina, Danny ; Isella, Giovanni

  • Author_Institution
    Sch. of Eng., Univ. of Glasgow, Glasgow, UK
  • fYear
    2012
  • Firstpage
    81
  • Lastpage
    83
  • Abstract
    Electroluminescence from strained n-Ge quantum wells LEDs on Si0.05Ge0.95 are demonstrated. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to transitions between the direct and indirect transitions respectively.
  • Keywords
    Ge-Si alloys; electroluminescence; elemental semiconductors; germanium; light emitting diodes; quantum well devices; semiconductor quantum wells; Ge-Si0.05Ge0.95; Si; direct transitions; electroluminescence; indirect transitions; silicon substrates; strained n-Ge quantum well LED; wavelength 1.55 mum; wavelength 1.8 mum; Electroluminescence; Light emitting diodes; Photonic band gap; Plasma temperature; Radiative recombination; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4577-0826-8
  • Type

    conf

  • DOI
    10.1109/GROUP4.2012.6324093
  • Filename
    6324093
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1626122