A SiGe frequency quadrupler for M-QAM carrier recovery

Author

Ulusoy, A. Çagr ; Liu, Gang ; Trasser, Andreas ; Schumacher, Hermann

Author_Institution

Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany

fYear

2010

Firstpage

17

Lastpage

20

Abstract

In this paper a frequency quadrupler circuit, integrated with a commercially available SiGe HBT technology (f_T/f_maxÂ¿80/90 GHz) is presented. The quadrupler consists of two Gilbert cell mixers stacked as squarers. The measured maximum conversion gain is 0.6 dB for an input level of -9 dBm. The circuit is optimized for M-QAM carrier recovery, and the performance was tested by applying QPSK and 16QAM modulated signals with 4 Gbit/s data rate at the input. Both experimental and simulated results are presented. The fully integrated chip is operated from a single 2.5V DC supply and draws 22.3 mA current.

Keywords

heterojunction bipolar transistors; millimetre wave mixers; modulators; quadrature amplitude modulation; Gilbert cell mixers; HBT technology; M-QAM carrier recovery; current 22.3 mA; frequency quadrupler circuit; voltage 2.5 V; Circuit testing; Frequency; Gain measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit measurements; Integrated circuit technology; Mixers; Quadrature phase shift keying; Silicon germanium; Bipolar analog integrated circuits; Demodulation; HF receivers; Millimeter wave communication; Quadrature phase shift keying; Synchronous detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on

Conference_Location

New Orleans, LA

Print_ISBN

978-1-4244-5456-3

Type

conf

DOI

10.1109/SMIC.2010.5422848

Filename

5422848