Title :
TFMS Microstrip line modelling and characterization up to 110 GHz on 45 nm node silicon technology: application for CAD
Author :
Quémerais, T. ; Moquillon, L. ; Fournier, J.M. ; Benech, P. ; Corrao, N.
Author_Institution :
IMEP-LHAC, UJF, Grenoble, France
Abstract :
An improved analytical model for integrated microstrip line experienced on 45 nm silicon technology is proposed. This model is derived from previous classical ones used for PCB circuits. Improvements have been performed to take into account the sizing effects for integrated lines. The study is performed up to 110 GHz for different line widths and results accuracy allow implementing the model in CAD software like Eldo, Spectre and the Agilent tools (RFDE, ADS, and GoldenGate) for mm-wave designs.
Keywords :
circuit CAD; microstrip lines; CAD software; PCB circuits; TFMS microstrip line modelling; computer aided design; printed circuit boards; silicon technology; size 45 nm; Analytical models; CMOS technology; Design automation; Integrated circuit technology; Microstrip; Millimeter wave communication; Millimeter wave technology; Semiconductor device modeling; Silicon; Substrates; 45nm technology; BEOL; microstrip lines; millimeter wave frequency;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422850
