Title :
Electrostatically-tunable analog RF MEMS varactors with measured capacitance range of 300%
Author :
Peroulis, D. ; Katehi, L.P.B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
This paper reports on the design, fabrication, and testing of a novel analog MEMS varactor with measured tuning range of 300%. The proposed electrostatically actuated varactor is based on a parallel-plate approach and is best suited for microwave/millimeter-wave applications. The measured capacitance values are in the range of 40-160 fF and are achieved with DC voltages of 20-34 V. The proposed varactor has the additional advantages of very high resonant frequency (its series measured parasitic inductance is 9 pH) and high quality factor (higher than 80 at 40 GHz).
Keywords :
Q-factor; capacitance; micromechanical devices; microwave diodes; millimetre wave diodes; varactors; 20 to 34 V; 40 GHz; 40 to 160 fF; DC voltages; analog MEMS varactor; capacitance range; electrostatically-tunable varactors; microwave applications; millimeter-wave applications; parallel-plate approach; parasitic inductance; quality factor; resonant frequency; Capacitance measurement; Electrostatic measurements; Fabrication; Frequency measurement; Inductance measurement; Micromechanical devices; Millimeter wave measurements; Radiofrequency microelectromechanical systems; Testing; Varactors;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210488
