• DocumentCode
    1626289
  • Title

    Role of the graded band gap layer in increasing the short wavelength sensitivity of three cascade solar cells

  • Author

    Hrayshat, Eyad S.

  • Author_Institution
    Tafila Appl. Univ. Coll., Jordan
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Abstract
    In this paper two structures of three cascade solar cells are discussed and analyzed. The first one is a three cascade solar cell with upper wide gap "window", which exhibited an appreciable values of its main parameters (Isc, Voc). However, this structure has a limited short wavelength sensitivity because of the surface recombination. In order to improve the main parameters of the above mentioned structure - particularly the short wavelength sensitivity - a new structure of three cascade solar cells, with graded band gap upper layer is suggested. This structure has been elaborated by combining liquid phase epitaxy with gas-phase zinc diffusion technologies, and the graded band gap upper layer has been fabricated by utilization of a special cassette of penal-box type. This new structure has shown better parameters than the parameters of the three cascade solar cell with upper wide gap "window". It exhibits appreciable values of photo-current and output voltage. Furthermore, this structure provides high short wavelength sensitivity due to the utilization of the graded band gap layer.
  • Keywords
    diffusion; energy gap; liquid phase epitaxial growth; solar cells; surface recombination; Zn; cascade solar cell; gas-phase zinc diffusion; graded band gap layer; liquid phase epitaxy; output voltage; penal-box type cassette; photocurrent; short wavelength sensitivity; surface recombination; wide gap window; Educational institutions; Epitaxial growth; Photonic band gap; Photovoltaic cells; Radiative recombination; Semiconductor materials; Space technology; Surface waves; Voltage; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
  • Print_ISBN
    0-7803-7380-4
  • Type

    conf

  • DOI
    10.1109/ICCDCS.2002.1004034
  • Filename
    1004034