DocumentCode
1626427
Title
Advantages of the Extended Interaction klystron Technology at Millimeter and Sub-Millimeter Frequencies
Author
Roitman, Albert ; Dobbs, Richard ; Berry, Dave ; Hyttinen, Mark ; Horoyski, Peter ; Steer, Brian
Author_Institution
Commun. & Power Ind. Canada Inc., Georgetown
fYear
2007
Firstpage
666
Lastpage
666
Abstract
The extended interaction klystron is one of the few readily available devices, capable of providing the required performance. This presentation describes the extended interaction klystron technology and presents improvements and design modifications in order to enhance power capability, bandwidth and to extend the operating frequency to the sub-millimeter region. A ladder-type RF circuit supports high efficiency and thermal stability at millimeter and sub-millimeter frequencies, while operating with moderate electron beam voltages. These EIKs operate at frequencies from 25 GHz to 280 GHz in continuous or pulsed modes.
Keywords
klystrons; ladder networks; millimetre wave amplifiers; millimetre wave circuits; millimetre wave oscillators; submillimetre wave amplifiers; submillimetre wave circuits; submillimetre wave oscillators; thermal stability; Klystron amplifiers; Klystron oscillators; bandwidth enhancement; extended interaction klystron technology; frequency 25 GHz to 280 GHz; ladder-type RF circuit; millimeter frequencies; moderate electron beam voltages; operating frequency range; power capability enhancement; sub-millimeter frequencies; thermal stability; Bandwidth; Circuits; Klystrons; Microwave communication; Millimeter wave technology; Optical beams; Power industry; Pulse amplifiers; Radio frequency; Rivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2007. ICOPS 2007. IEEE 34th International Conference on
Conference_Location
Albuquerque, NM
ISSN
0730-9244
Print_ISBN
978-1-4244-0915-0
Type
conf
DOI
10.1109/PPPS.2007.4345972
Filename
4345972
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