Title :
Applying device simulation for lifetime-controlled devices
Author :
Siemieniec, R. ; Südkamp, W. ; Lutz, J.
Author_Institution :
Ilmenau Tech. Univ., Germany
fDate :
6/24/1905 12:00:00 AM
Abstract :
Irradiation techniques are widely used for carrier lifetime control in power devices. Improvements of irradiated devices were usually realized by a number of experiments. The use of an extended recombination model allows improved device simulations which explain the temperature dependencies of stationary and dynamical characteristics. Due to that progress device simulation is able to support development and optimization of irradiated devices.
Keywords :
carrier lifetime; electron-hole recombination; power semiconductor devices; radiation effects; semiconductor device models; carrier lifetime control; irradiation technique; numerical simulation; power device; recombination model; temperature dependence; Annealing; Electron traps; Gold; Helium; Photonic band gap; Platinum; Poisson equations; Radiative recombination; Spontaneous emission; Temperature dependence;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004041
