Title :
A physically-based continuous analytical graded-channel SOI nMOSFET model for analog applications
Author :
Pavanello, Marcelo Antonio ; Iniguez, B. ; Martino, Joao Antonio ; Flandre, Denis
Author_Institution :
Center for Semicond. Components, State Univ. of Campinas, Brazil
fDate :
6/24/1905 12:00:00 AM
Abstract :
In this work a continuous model for analog simulation of long-channel Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs is presented. The model is based in a series association of two conventional fully-depleted (FD) SOI nMOSFETs with different characteristics, representing each part of the GC nMOSFET channel region. MEDICI numerical bidimensional simulations and experimental results are used to validate the proposed model.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; MEDICI two-dimensional numerical simulation; analog simulation; continuous analytical model; fully-depleted transistor; graded-channel SOI nMOSFET; Analytical models; Capacitance; Doping; MOSFET circuits; Numerical simulation; Semiconductor films; Semiconductor process modeling; Silicon on insulator technology; Threshold voltage; Transconductance;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004044
