DocumentCode
1626491
Title
A physically-based continuous analytical graded-channel SOI nMOSFET model for analog applications
Author
Pavanello, Marcelo Antonio ; Iniguez, B. ; Martino, Joao Antonio ; Flandre, Denis
Author_Institution
Center for Semicond. Components, State Univ. of Campinas, Brazil
fYear
2002
fDate
6/24/1905 12:00:00 AM
Abstract
In this work a continuous model for analog simulation of long-channel Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs is presented. The model is based in a series association of two conventional fully-depleted (FD) SOI nMOSFETs with different characteristics, representing each part of the GC nMOSFET channel region. MEDICI numerical bidimensional simulations and experimental results are used to validate the proposed model.
Keywords
MOSFET; semiconductor device models; silicon-on-insulator; MEDICI two-dimensional numerical simulation; analog simulation; continuous analytical model; fully-depleted transistor; graded-channel SOI nMOSFET; Analytical models; Capacitance; Doping; MOSFET circuits; Numerical simulation; Semiconductor films; Semiconductor process modeling; Silicon on insulator technology; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN
0-7803-7380-4
Type
conf
DOI
10.1109/ICCDCS.2002.1004044
Filename
1004044
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