• DocumentCode
    1626511
  • Title

    CMOS kink effect-induced instability in Al/AlOx single electron transistors

  • Author

    Prager, Aaron A. ; George, Hubert C. ; Orlov, Alexei O. ; Snider, Gregory L.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
  • fYear
    2010
  • Firstpage
    113
  • Lastpage
    114
  • Abstract
    We present an examination of single electron transistor instability resulting from the presence of CMOS devices co-located on the same silicon substrate. This instability may impact future attempts to integrate single electron devices with CMOS circuits.
  • Keywords
    CMOS integrated circuits; aluminium compounds; single electron transistors; stability; Al-AlOx; CMOS devices; CMOS kink effect-induced instability; single electron transistors; CMOS integrated circuits; Gallium nitride; Inverters; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551862
  • Filename
    5551862
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1626511