Title :
Numerical analysis of strained SiGe-based carrier-injection optical modulators
Author :
Kim, Younghyun ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
Strain effect on SiGe-based carrier-injection optical modulators is numerically investigated. Owing to enhancement in free-carrier absorption of strained SiGe, SiGe-based pin-junction optical modulator is predicted to exhibit the 4.7× enhancement of free-carrier absorption against Si.
Keywords :
Ge-Si alloys; numerical analysis; optical modulation; p-i-n diodes; semiconductor materials; SiGe; free-carrier absorption; numerical analysis; pin-junction optical modulator; strain effect; strained carrier-injection optical modulators; Absorption; Optical modulation; Optical refraction; Optical variables control; Silicon; Silicon germanium;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324108
