Title :
Amorphous InGaZnO logic gates for transparent electronics
Author :
Luo, Haojun ; Wellenius, Patrick ; Lunardi, Leda ; Muth, John F.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
In this paper we present, transparent logic showing good performance from inverters, NAND and NOR gates, all deposited at room temperature. The significance of these results is that construction of these basic digital logic building blocks with high gain and fast response demonstrate the viability for amorphous oxide digital logic to be utilized in transparent, and flexible electronic systems.
Keywords :
amorphous semiconductors; flexible electronics; gallium compounds; indium compounds; invertors; logic gates; zinc compounds; InGaZnO; NAND gate; NOR gates; amorphous InGaZnO logic gates; amorphous oxide digital logic; flexible electronic systems; inverters; temperature 293 K to 298 K; transparent electronics; Geometry; Indium tin oxide; Inverters; Logic gates; Performance evaluation; Ring oscillators; Transistors;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551866
