DocumentCode :
1626675
Title :
MOSFET statistical parameter extraction using multivariate statistics
Author :
Power, J.A. ; Mathewson, A. ; Lane, W.A.
Author_Institution :
Nat. Microelectron. Res. Center, Cork, Ireland
fYear :
1990
Firstpage :
209
Lastpage :
214
Abstract :
A methodology for the generation of MOSFET device model parameter sets which reflect measured device performance variations is described and assessed for its accuracy and suitability in predicting actual circuit variations. The proposed scheme is based on the principal component method of multivariate statistical techniques and utilizes Monte Carlo simulations. Comparisons between the predictions of device and circuit characteristics and measured characteristics over a wafer lot are shown and discussed. It is suggested that the techniques used are most suitable for the prediction of the measured distributions of precision analog circuits rather than large digital circuits where 25 or more circuit simulations may be totally unacceptable because of the amount of CPU time required
Keywords :
MOS integrated circuits; Monte Carlo methods; circuit analysis computing; electronic engineering computing; insulated gate field effect transistors; semiconductor device models; CPU time; MOSFET; Monte Carlo simulations; device model parameter sets; multivariate statistics; precision analog circuits; statistical circuit modelling; statistical parameter extraction; Circuit optimization; Circuit simulation; Fluctuations; Integrated circuit modeling; MOSFET circuits; Manufacturing processes; Microelectronics; Parameter extraction; Performance analysis; Statistics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
Type :
conf
DOI :
10.1109/ICMTS.1990.161743
Filename :
161743
Link To Document :
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