PL and CL emissions in thermal oxide and silicon rich oxide films implanted with silicon

Author

Gracia, F. Flores ; Aceves, M. ; Carrillo, J. ; Dominguez, C. ; Falcony, C.

Author_Institution

Instituto Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico

fYear

2002

fDate

6/24/1905 12:00:00 AM

Abstract

In this work, photoluminescence (PL) and cathodoluminescence (CL) of silicon oxide films implanted with silicon were investigated. Thermal oxide and silicon rich oxide obtained by LPCVD films and both implanted with silicon (SITO and SISRO) were studied. The results show that SISRO radiates in the same wavelength as SITO, but with higher intensity. In addition, it is shown that PL and CL bands are not only related to the Si-excess of the films. The PL of the silicon rich oxide is the highest reported to date. The results show that an optimum annealing time exists to produce the highest luminescence intensity. It is proposed that in these materials, the radiation allowed should be confined between 1.4 and 3 eV.

Keywords

annealing; cathodoluminescence; chemical vapour deposition; dielectric thin films; doping profiles; ion implantation; photoluminescence; silicon; silicon compounds; 1.4 to 3 eV; CL bands; CL emissions; LPCVD films; PL bands; PL emissions; SISRO; SITO; SiO₂:Si; cathodoluminescence; luminescence intensity; luminescence wavelength; optimum annealing time; photoluminescence; silicon implanted silicon rich oxide films; silicon implanted thermal oxide films; silicon oxide films; Amorphous materials; Annealing; Atmosphere; Luminescence; Optical films; Photoluminescence; Potential well; Semiconductor films; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on

Print_ISBN

0-7803-7380-4

Type

conf

DOI

10.1109/ICCDCS.2002.1004061

Filename

1004061