Title :
Improvement of SiGe MOS interfaces by plasma post-nitridation for SiGe high-k MOS optical modulators
Author :
Han, J.H. ; Zhang, R. ; Osada, T. ; Hata, M. ; Takenaka, M. ; Takagi, S.
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
Plasma post-nitridation process was investigated to improve SiGe MOS interfaces for high-k MOS optical modulators. The interface trap density was reduced by an order of magnitude by nitridation, which can contribute to enhance modulation efficiency.
Keywords :
MIS devices; nitridation; optical fabrication; optical modulation; plasma materials processing; silicon compounds; MOS interfaces; SiGe; high-k MOS optical modulators; interface trap density; modulation efficiency; plasma post-nitridation; Aluminum oxide; High K dielectric materials; Optical modulation; Plasmas; Silicon; Silicon germanium;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324114
