Title :
Effect of uniaxial tensile strain on electrical performance of amorphous IGZO TFTs and circuits on flexible Metal foils
Author :
Khan, Shahrukh A. ; Kuo, Po-Chin ; Jamshidi-Roudbari, Abbas ; Hatalis, Miltiadis
Author_Institution :
Dept. of Electr. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
This paper discusses oxide-semiconductor (amorphous Indium Gallium Zinc Oxide, IGZO in particular) based thin-film transistors (TFTs) which provide san attractive alternative to silicon-based TFTs. This study systematically investigates the influence of tensile strain on IGZO TFTs and ring oscillators fabricated on flexible stainless steel substrates.
Keywords :
amorphous semiconductors; gallium compounds; indium compounds; oscillators; substrates; tensile strength; ternary semiconductors; thin film transistors; zinc compounds; FeCCrJk; IGZO TFT; InGaZnO; flexible stainless steel substrates; oxide-semiconductor based thin film transistors; ring oscillators fabrication; tensile strain; Capacitance; Capacitance measurement; Etching;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551869
