Complementary GaAs (CGaAs) technology and applications

Author

Hallmark, Jerry ; Abrokwah, Jon ; Bernhardt, Birgitta ; Crawforth, Brian ; Foster, Dave ; Huang, Jenn-Hwa ; LaMacchia, M. ; Lucero, Rudy ; Mathes, Bill ; Ooms, Bill

Author_Institution

Phoenix Corp. Res. Lab., Motorola Inc., Tempe, AZ, USA

fYear

1995

Firstpage

275

Lastpage

278

Abstract

A self-aligned complementary GaAs (CGaAs) technology has been developed for low-power, high-speed digital and mixed-mode applications. A single process flow has been used to build low-voltage, low-power, full-complementary digital circuits at 200 MHz, high-speed SCFL digital circuits at 5 GHz, RF MMIC and power circuits (900 MHz), and combinations of these. Complementary digital circuits have demonstrated speed-power performance of 0.1 μW/MHz/gate at 0.9 V. A mixed SCFL/Complementary signal processor operated at >1 GHz with a speed-power performance of 0.16 μW/MHz/gate

Keywords

III-V semiconductors; digital integrated circuits; gallium arsenide; integrated circuit technology; mixed analogue-digital integrated circuits; 0.9 V; 200 MHz; 5 GHz; 900 MHz; GaAs; MMIC circuits; RF circuits; high-speed SCFL circuits; low-voltage low-power full-complementary digital circuits; mixed-mode circuits; power circuits; process flow; self aligned complementary GaAs technology; signal processor; Digital circuits; Doping; Gallium arsenide; Implants; Plasma temperature; Radio frequency; Silicon; Space technology; Temperature distribution; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on

Conference_Location

San Francisco

Print_ISBN

0-7803-2516-8

Type

conf

DOI

10.1109/ISSSE.1995.497987

Filename

497987