• DocumentCode
    1626805
  • Title

    Very low photo-CVD deposition rate process for high quality thin SiO2 films

  • Author

    Sánchez, V.M. ; Munguia, Z.J. ; Estrada, M.

  • Author_Institution
    Departamento de Ingenieria Electrica, CINVESTAV-IPN, Mexico City, Mexico
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Abstract
    Very low deposition rates, below 0.56 nm/min, of SiO2 were investigated using photo-induced chemical vapor deposition (photo-CVD). These low deposition rates are adequate to grow very thin and ultra thin layers of SiO2. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber is discussed. Deposited layers were characterized using I-V and C-V techniques.
  • Keywords
    MOSFET; characteristics measurement; chemical vapour deposition; insulating thin films; semiconductor device measurement; silicon compounds; C-V techniques; I-V techniques; MOS transistors; SiO2; deposition rate; deposition regime; high quality oxide films; photo-CVD deposition; photoinduced chemical vapor deposition; process parameters; reaction chamber; reactive gases; Capacitance-voltage characteristics; Chemical vapor deposition; Deuterium; Gases; Lamps; MOS devices; Masers; Optical pulses; Pulsed laser deposition; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
  • Print_ISBN
    0-7803-7380-4
  • Type

    conf

  • DOI
    10.1109/ICCDCS.2002.1004067
  • Filename
    1004067
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1626805