DocumentCode
1626816
Title
Self-consistent electro-thermal simulation of AlGaN/GaN HEMTs for reliability prediction
Author
Gao, Feng ; Lo, Hsin-Yi ; Ram, Rajeev ; Palacios, Tomás
Author_Institution
Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2010
Firstpage
127
Lastpage
128
Abstract
In this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resolution thermo-reflectance measurements, obtaining excellent agreement.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; reliability; AlGaN-GaN; HEMT; electro-thermo-mechanical simulation; reliability prediction; self-consistent electro-thermal simulation; Gallium nitride; HEMTs; Lattices; MATLAB; MODFETs; Mathematical model; Strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2010
Conference_Location
South Bend, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-6562-0
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2010.5551870
Filename
5551870
Link To Document