Solution-processed zinc-tin oxide thin-film transistors with high performance and improved uniformity

Amorphous metal-oxide semiconductors have attracted a significant amount of attention in the past few years because of their high mobility, stability in ambient air and potential to be processed by solution approaches. Performance uniformity throughout a sample is very important for all kinds of solution processes, including spin coating, inkjet printing and drop casting. Thickness variation and annealing process are two main sources of performance fluctuation. In this study, we combined solution-processed zinc tin oxide (ZTO) and solution-processed high-k dielectric, ZrO₂, to study the effect of pre-bake before the ZTO annealing on the device performance and performance uniformity. A top contact structure is employed while the substrate and the gate electrode are glass and AuPd, respectively.