Title :
A figure of merit for the high-frequency noise behaviour of bipolar transistors
Author :
de Graaff, H.C. ; de Vreede, L.C.N. ; Hurkx, G.A.M. ; Tauritz, J.L. ; Baets, R.G.F.
Author_Institution :
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
Abstract :
A new figure of merit for high-frequency noise behavior for use in the evaluation and development of bipolar silicon process technology is introduced. Basic low noise design rules for optimum transistor biasing and emitter scaling are proposed
Keywords :
bipolar transistors; bipolar Si process technology; bipolar transistors; emitter scaling; figure of merit; high-frequency noise behaviour; low noise design rules; noise model; optimum transistor biasing; Bipolar transistors;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617481
