DocumentCode
1626887
Title
A figure of merit for the high-frequency noise behaviour of bipolar transistors
Author
de Graaff, H.C. ; de Vreede, L.C.N. ; Hurkx, G.A.M. ; Tauritz, J.L. ; Baets, R.G.F.
Author_Institution
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
fYear
1993
Firstpage
118
Lastpage
121
Abstract
A new figure of merit for high-frequency noise behavior for use in the evaluation and development of bipolar silicon process technology is introduced. Basic low noise design rules for optimum transistor biasing and emitter scaling are proposed
Keywords
bipolar transistors; bipolar Si process technology; bipolar transistors; emitter scaling; figure of merit; high-frequency noise behaviour; low noise design rules; noise model; optimum transistor biasing; Bipolar transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1993.617481
Filename
617481
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