Title :
Reduced self-heating in ALGaN/GaN HEMTs using nanocrystalline diamond heat spreading films
Author :
Tadjer, M.J. ; Anderson, T.J. ; Hobart, K.D. ; Feygelson, T.I. ; Mastro, M.A. ; Caldwell, J.D. ; Hite, J.K. ; Eddy, C.R., Jr. ; Kub, F.J. ; Butler, J.E. ; Melngailis, J.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
In this work, we present HEMTs with nanocrystalline diamond (NCD) heat spreading films, which offer a high thermal conductivity path only 50 nm away from the gate (kNCD of up to 1300 W/m-K).
Keywords :
III-V semiconductors; aluminium compounds; diamond; gallium compounds; high electron mobility transistors; nanostructured materials; thermal conductivity; wide band gap semiconductors; AlGaN-GaN; C; HEMT; high electron mobility transistors; nanocrystalline diamond heat spreading films; reduced self-heating; thermal conductivity; Aluminum gallium nitride; Diamond-like carbon; Films; Gallium nitride; HEMTs; Heating; MODFETs;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551873
