• DocumentCode
    1626906
  • Title

    Reduced self-heating in ALGaN/GaN HEMTs using nanocrystalline diamond heat spreading films

  • Author

    Tadjer, M.J. ; Anderson, T.J. ; Hobart, K.D. ; Feygelson, T.I. ; Mastro, M.A. ; Caldwell, J.D. ; Hite, J.K. ; Eddy, C.R., Jr. ; Kub, F.J. ; Butler, J.E. ; Melngailis, J.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • fYear
    2010
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    In this work, we present HEMTs with nanocrystalline diamond (NCD) heat spreading films, which offer a high thermal conductivity path only 50 nm away from the gate (kNCD of up to 1300 W/m-K).
  • Keywords
    III-V semiconductors; aluminium compounds; diamond; gallium compounds; high electron mobility transistors; nanostructured materials; thermal conductivity; wide band gap semiconductors; AlGaN-GaN; C; HEMT; high electron mobility transistors; nanocrystalline diamond heat spreading films; reduced self-heating; thermal conductivity; Aluminum gallium nitride; Diamond-like carbon; Films; Gallium nitride; HEMTs; Heating; MODFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551873
  • Filename
    5551873
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1626906